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ESD Protection Diodes LEF10003M8-4

Bi-Directional ESD/EMI Protection Device

  • Stand-Off Voltage - 5.0 Volts

General Description

The LEF10003M8-4, manufactured using Thin Film on Silicon technology, provides ESD protection for the external ports of portable electronic devices such as cell phones, notebooks and PDAs.

Features

  • Protects four lines
  • ESD protection
  • Bidirectional EMI filtering
  • IEC 61000-4-2, level 4 (ESD), > 15KV (air); > 8KV (contact)

Application

  • Cell phones
  • PDAs and notebooks
  • GPS and SMART cards
  • Color LCD Display Panel

Mechanical Data

  • Case Material: “Green” molding compound UL flammability classification 94V-0 (No Br.Sb, Cl)
  • Terminals: Lead Free Plating (Matte Tin Finish)
  • Component in accordance to RoHs 2002/95/EC
  • Weight: 0.007 ounces, 0.21 gram

Maximum Ratings (Tj= 25°C unless otherwise noticed)

Rating
Symbol
Value
Unit
DC Power per Resistor
P
100 (Max)
mW
Operating Junction Temperature Range
TJ
-40 to + 85
°C
Storage Temperature Range
Tstg
-55 to + 150
°C
Soldering Temperature, t max = 10s
TL
260
°C

Electrical Characteristics (Tj= 25°C unless otherwise noticed)

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance
R
—
80
100
120
Ohm
Reverse standoff voltage
VDRM
—
—
5.0
—
V
Reverse leakage current
IRM
VDRM = 3 V
—
—
0.1
µA
Breakdown voltage
VBR
IR = 1 mA
6.0
—
8.0
V
Forward Voltage
VF
IF=10 mA
—
0.8
1.0
V
Junction capacitance
(Each l/O pin and ground)
CJ
VR = 2.5 V,
f = 1MHz
16
20
24
pF
Frequency: Attenuation @ 800-3000 MHz.
Cut-off (50 Ohm I/O) Zero Bias
fc
—
25
—
—
180
—
—
db
MHz

SLP2116P8

WEF10003M8-4Dia
Dim.
Min.
Max.
A
0.50
0.65
B
0.00
0.05
C
0.15 (Typ.)
D
2.00
2.20
E
1.50
1.70
F
1.55
1.80
G
0.25
0.50
H
0.50 (Typ.)
I
1.68
2.28
J
1.20
1.80
All dimensions in millimeters

Marking & Orientation
WEF10003M8-4Marking

Rating and Characteristic Curves

WEF10003M8-4Curves1

WEF10003M8-4Curves2

© Specifications mentioned in this publication are subject to change without notice.

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