Thyristors
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World Products Inc., specializing in protection components for telecommunication and AC and DC circuits, is proud to feature World Products complete line of Thyristors.
The main features of these Thyristors are:
- Bidirectional transient voltage protection.
- Nanosecond clamping response.
- No performance degradation under service life.
- Glass passivated junction.
Providing the following benefits:
- A range ofb voltage protection levels.
- Primary or secondary protection levels.
- Highest level of quality and reliability.
- Low cost auto-assembly.
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Definitions

| SYMBOL |
CHARACTERISTIC |
VALUE |
| VBO |
Max Breakover Voltage |
The maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise. |
| VBR |
Min Breakover Voltage |
The minimum voltage at which the device switch-on begins and significant current flows. |
| IBO |
Breakover Current |
The instantaneous current flowing at the breakover voltage. (VBO) |
| IH |
Holding Current |
The minimum current required to maintain the device in the on-state. |
| IT |
On-state Current |
The current through the device in the on-state condition. |
| VT |
On-state Voltage |
The voltage across the device in the on-state condition at a specified current. (IT) |
| VDRM |
Rated Repetitive Peak Off-state Voltage |
Rated maximum (peak) continuous voltage that may be applied in the off-state condition. |
| IDRM |
Repetitive Peak Off-state Current |
The maximum (peak) value of the current that results from the application of (VDRM) |
| IPPS |
Non-Repetitive Peak Pulse Current |
Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test. |
| ITSM |
Non-Repetitive Surge Peak On-state Current |
Rated maximum value of AC current, at a given frequency, which may be applied for specified time or number of cycles. |
| di/dt |
Critical Rate of Rise of On-state Current. |
Rated value of the rate of rise of current that the device can withstand without damage. |
| dv/dt |
Critical Rate of Rise of Off-state Voltage. |
The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off-state to the on-state |
Features
- Protects by Limiting voltages and shunting surge currents away from sensitive circuits.
- Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN, VHDSL.
- Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68.
- Low capacitance, high surge (C, D, E rating available), precise voltage limiting, long life.
- RoHS compliant with Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS Directive) and comply to a maximum concentration value of 0.1% by weight in homogeneous materials for lead (Pb), mercury, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE) and of 0.01% weight in homogeneous materials for cadmium.
Selection Guide
Follow these steps to select the proper Thyristor surge protector for your application:
1. Define the operating parameters for the circuit:
- Ambient operating temperature range
- Maximum telephone line operating current (highest battery and shortest copper loop)
- Maximum operating voltage: (Maximum DC bias + peak ringing voltage)
- Maximum surge current
- System voltage damage threshold
2. Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature
3. Select surge current ratings (IPPS and ITSM) > those which the application must withstand
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.
7. Verify that the device's dimensions fit the application's space considerations.
8. Independently evaluate and test the suitability and performance of the device in the application
Maximum Thermal Ratings
| Rating |
Symbol |
Value |
Unit |
| Storage Junction Temperature Range |
TSTG |
-55 to 150 |
°C |
| Operating Junction Temperature Range |
TJ |
-40 to 150 |
°C |
Notes:
PCB board mounted on minimum foot print.
Thermal Characteristics
| Characteristic |
Symbol |
Value |
Unit |
| Thermal Resistance Junction to leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes. |
RØJL |
Max. 20 |
°C / W |
Notes:
The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
Electrical Characteristics Definition
(Tc = 25 °C UNLESS OTHERWISE NOTED)
| Parameters |
Test Conditions |
Symbol |
Min. |
Max. |
Unit |
Repetitive Peak
Off-State Current |
VD = rated VDRM |
IDRM |
|
5 |
µA |
| Breakover Current |
f = 60 Hz, ISC = 1Arms, Vac = 1 KVrms, RL = 1Kohm, 1/2 AC cycle |
IBO |
. |
800 |
mA |
| Holding Current |
10/1000µs waveform, ISC = 10A, VOC = 62 V, RL = 400 ohms |
IH |
150 |
|
mA |
| On-State Voltage |
IT = 1 A, TW = 300µs, 1 pulse |
VT |
. |
3.5 |
V |
Notes:
Specific IH values are available by request. |
Mechanical Data
- Case: JEDEC DO-214AA molded plastic
- Polarity: Bi-directional Standard packaging: 12mm tape (EIA-481)
- Weight: 0.003 ounce, 0.093 gram
SMB / DO-214AA
Unit: inch (mm)
Solder Pads
Unit: inch (mm)
Solderability
Military Standard 202G, Method 208H
Heat Resistance of Solder
Maximum Surge Ratings
(TJ = 25 °C UNLESS OTHERWISE NOTED)
| Rating |
Non-Repetitive Peak Pulse Current |
| Symbol |
IPPS |
Short-Circuit
Current Wave |
2/10 µs |
8/20 µs |
10/160 µs |
10/560 µs |
10/1000 µs |
Open-Circuit
Voltage Wave |
2/10 µs |
1.2/50 µs |
10/160 µs |
10/560 µs |
10/1000 µs |
| C |
200 A |
150 A |
100 A |
70 A |
50 A |
| D |
300 A |
250 A |
150 A |
100 A |
80 A |
| E |
500 A |
400 A |
250 A |
200 A |
100 A |
| Notes |
(1,2,4,5,6) |
Notes:
1. Thermal accumulation between successive surge tests is not allowed.
2. The device under test initially must be in thermal equilibrium with TJ = 25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated TJ. Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life.
5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation.
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B: (Duration time to 50% level of IPPS) = T1 - T0
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Maximum Rated Surge Waveform
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Waveform
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Standard
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Ipp(A)
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Waveform of Surge
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C type
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D type
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E type
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2 / 10µs
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GR-1089-CORE
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200
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300
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500
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8 / 20µs
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IEC61000-4-5
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150
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250
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400
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10 / 160µs
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FCC Part 68
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100
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150
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250
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10 / 700µs
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ITU-T K20/21
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60
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90
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160
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10 / 560µs
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FCC Part 68
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70
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100
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200
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10 / 1000µs
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GR-1089-CORE
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50
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80
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100
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Electrical Characteristics
Part
Number |
Rated Repetitive Peak
Off-State Voltage |
Breakover
Voltage |
On-state
Voltage |
Repetitive Peak
Off-State Current |
Breakover
Current |
Holding Current |
Off-State Capacitance
(f = 1MHz,
1.0Vrms) |
| Max. |
Max. |
Max. |
Max. |
Max. |
Min. |
Typ. |
| VDRM |
VBO@IBO |
VT@1A |
IDRM |
IBO |
IH |
CO @ 2Vdc |
| V |
V |
V |
µA |
mA |
mA |
pF |
| Series |
C, D or E |
C |
D |
E |
WPSCDS-058 |
58 |
77 |
3.5 |
5.0 |
800 |
150 |
100 |
140 |
200 |
WPSCDS-065 |
65 |
88 |
3.5 |
5.0 |
800 |
150 |
100 |
140 |
200 |
WPSCDS-075 |
75 |
98 |
3.5 |
5.0 |
800 |
150 |
100 |
140 |
200 |
WPSCDS-090 |
90 |
130 |
3.5 |
5.0 |
800 |
150 |
60 |
90 |
120 |
WPSCDS-120 |
120 |
160 |
3.5 |
5.0 |
800 |
150 |
60 |
90 |
120 |
WPSCDS-140 |
140 |
180 |
3.5 |
5.0 |
800 |
150 |
60 |
90 |
120 |
WPSCDS-160 |
160 |
220 |
3.5 |
5.0 |
800 |
150 |
60 |
90 |
120 |
WPSCDS-190 |
190 |
265 |
3.5 |
5.0 |
800 |
150 |
40 |
60 |
80 |
WPSCDS-220 |
220 |
300 |
3.5 |
5.0 |
800 |
150 |
40 |
60 |
80 |
WPSCDS-275 |
275 |
350 |
3.5 |
5.0 |
800 |
150 |
40 |
60 |
80 |
WPSCDS-320 |
320 |
400 |
3.5 |
5.0 |
800 |
150 |
40 |
60 |
80 |
| Notes |
(1,3) |
(3,5,6) |
(3) |
(3) |
(3) |
(2,3) |
(3) |
(3) |
(3) |
- Part Number Suffix:
Current Rating Code C, D, E.
If Pb-Free is required add suffix “F” after suffix code C, D, or E.

Notes:
1. Specific VDRM values are available by request.
2. Specific IH values are available by request.
3. All ratings and characteristics are at 25 °C unless otherwise specified.
4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device.
All parts are UL Recognized File # 135015.
Device Part Marking
Example Part Number: WPSCDS-058C
Order and Packing Information
| Device |
Packing |
Min. Order Qty. |
Order As |
Remark |
WPSCDS-xxx |
13" Tape & Reel |
3,000 pcs |
WPSCDS-xxxT |
Standard Packing |
| Bulk |
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WPSCDS-xxxB |
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Rating and Characteristic Curves
C Series

D Series

E Series

C, D, E Series

Circuit Examples
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